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SI2305CDS-T1-GE3
Power MOSFET, P Channel, 8 V, 5.8 A, 35 mohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2305CDS-T1-GE3
Newark Part No.55R1909
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id5.8A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.028ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.7W
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
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Product Overview
The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
35mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
5.8A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.7W
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability