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SI2308BDS-T1-E3
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.838 |
| 25+ | $0.519 |
| 50+ | $0.433 |
| 100+ | $0.347 |
| 250+ | $0.314 |
| 500+ | $0.281 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-E3
Newark Part No.69W7187
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.156ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.66W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2308BDS-T1-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for battery switch and DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.156ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability