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SI2319CDS-T1-GE3
MOSFET Transistor, P Channel, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
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| 10+ | $0.642 |
| 25+ | $0.586 |
| 50+ | $0.532 |
| 100+ | $0.477 |
| 250+ | $0.474 |
| 500+ | $0.396 |
| 1000+ | $0.367 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-GE3
Newark Part No.23T8498
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
On Resistance Rds(on)0.064ohm
Drain Source On State Resistance0.064ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.25W
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.064ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
4.4A
Drain Source On State Resistance
0.064ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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