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SI2319DS-T1-E3
Power MOSFET, P Channel, 40 V, 3 A, 0.065 ohm, TO-236, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319DS-T1-E3
Newark Part No.06J7581
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3A
Drain Source On State Resistance0.065ohm
On Resistance Rds(on)0.065ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd750mW
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-236
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI2319DS-T1-E3 is a -40V P-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
750mW
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.065ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
3V
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate