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SI2336DS-T1-GE3
Power MOSFET, N Channel, 30 V, 5.2 A, 42 mohm, SOT-23, Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.300 |
| 10+ | $0.300 |
| 25+ | $0.300 |
| 50+ | $0.300 |
| 100+ | $0.276 |
| 250+ | $0.275 |
| 500+ | $0.275 |
| 1000+ | $0.275 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.30
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-GE3
Newark Part No.23T8500
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
Drain Source On State Resistance42mohm
On Resistance Rds(on)0.034ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.8W
Power Dissipation Pd1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
- N-channel 30V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Used in DC/DC converters, boost converters
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
42mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.8W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
On Resistance Rds(on)
0.034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate