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SI2337DS-T1-E3
Power MOSFET, P Channel, 80 V, 2.2 A, 0.216 ohm, TO-236, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2337DS-T1-E3
Newark Part No.21M8886
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.216ohm
On Resistance Rds(on)0.216ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage6V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-236
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI2337DS-T1-E3 is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.216ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
6V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.2A
On Resistance Rds(on)
0.216ohm
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
4V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
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Product Compliance Certificate
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