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SI2369DS-T1-GE3
Power MOSFET, P Channel, 30 V, 7.6 A, 0.029 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2369DS-T1-GE3
Newark Part No.70AC6498
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.6A
On Resistance Rds(on)0.024ohm
Drain Source On State Resistance0.029ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOT-23
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology.
- 100% Rg Tested
- Halogen-free
Applications
Audio, Signal Processing, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
7.6A
Drain Source On State Resistance
0.029ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate