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SI3443CDV-T1-GE3
Power MOSFET, P Channel, 20 V, 5.97 A, 0.06 ohm, TSOP, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.145 |
| 25+ | $0.145 |
| 50+ | $0.145 |
| 100+ | $0.145 |
| 250+ | $0.145 |
| 500+ | $0.145 |
| 1000+ | $0.145 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3443CDV-T1-GE3
Newark Part No.55R1913
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.97A
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.05ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.2W
Gate Source Threshold Voltage Max600mV
Power Dissipation3.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI3443CDV-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for HDD, asynchronous rectification and load switch applications.
- PWM optimized
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.97A
On Resistance Rds(on)
0.05ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.2W
Power Dissipation
3.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.06ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate