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SI3458BDV-T1-GE3
Power MOSFET, N Channel, 60 V, 3.2 A, 0.1 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.406 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,218.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3458BDV-T1-GE3
Newark Part No.84R8039
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3.2A
On Resistance Rds(on)0.082ohm
Drain Source On State Resistance0.1ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2W
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max3V
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.082ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.2A
Drain Source On State Resistance
0.1ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TSOP
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate