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| Quantity | Price |
|---|---|
| 1+ | $0.538 |
| 10+ | $0.508 |
| 25+ | $0.474 |
| 50+ | $0.442 |
| 100+ | $0.411 |
| 250+ | $0.388 |
| 500+ | $0.374 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3477DV-T1-GE3
Newark Part No.61AC1932
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id8A
Drain Source On State Resistance0.0175ohm
On Resistance Rds(on)0.014ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Power Dissipation Pd4.2W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation4.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0175ohm
Transistor Case Style
TSOP
Power Dissipation Pd
4.2W
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
4.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI3477DV-T1-GE3
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability