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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4056DY-T1-GE3
Newark Part No.19X1959
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id11.1A
On Resistance Rds(on)0.017ohm
Drain Source On State Resistance0.023ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation5.7W
Power Dissipation Pd5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
- N-channel 100 V (D-S) TrenchFET® power MOSFET
- 100 % Rg and UIS Tested
- Used in DC/DC primary side switch, telecom/server, industrial, synchronous rectification
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.017ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5.7W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
11.1A
Drain Source On State Resistance
0.023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
5.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate