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SI4136DY-T1-GE3
Power MOSFET, N Channel, 20 V, 46 A, 0.002 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,350.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4136DY-T1-GE3
Newark Part No.85W3204
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id46A
On Resistance Rds(on)0.00155ohm
Drain Source On State Resistance0.002ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd7.8W
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation7.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.00155ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
7.8W
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.002ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation
7.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate