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| Quantity | Price |
|---|---|
| 1+ | $0.527 |
| 10+ | $0.448 |
| 25+ | $0.418 |
| 50+ | $0.388 |
| 100+ | $0.361 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4435DDY-T1-E3
Newark Part No.61AC1934
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11.4A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.0195ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
SOIC
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
11.4A
On Resistance Rds(on)
0.0195ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for SI4435DDY-T1-E3
1 Product Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability