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SI4447ADY-T1-GE3.
Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount
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27,500 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.302 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$755.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4447ADY-T1-GE3.
Newark Part No.28AC2141
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id7.2A
Drain Source On State Resistance0.036ohm
On Resistance Rds(on)0.036ohm
Transistor MountingSurface Mount
Power Dissipation Pd4.2W
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.2V
Power Dissipation4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.036ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7.2A
On Resistance Rds(on)
0.036ohm
Power Dissipation Pd
4.2W
Transistor Case Style
SOIC
Power Dissipation
4.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate