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SI4447ADY-T1-GE3
Power MOSFET, P Channel, 40 V, 7.2 A, 0.045 ohm, SOIC, Surface Mount
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| 1+ | $0.211 |
| 10+ | $0.211 |
| 25+ | $0.211 |
| 50+ | $0.211 |
| 100+ | $0.211 |
| 250+ | $0.211 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4447ADY-T1-GE3
Newark Part No.64T4066
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id7.2A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.036ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation4.2W
Power Dissipation Pd4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
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Product Overview
- 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package
- 100% Rg tested
- 100 % UIS tested
- Suitable for load switches, adaptor switch and notebook PCs
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.045ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.2W
No. of Pins
8Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
7.2A
On Resistance Rds(on)
0.036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
4.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate