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SI4840BDY-T1-GE3
Power MOSFET, N Channel, 40 V, 19 A, 0.009 ohm, NSOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4840BDY-T1-GE3
Newark Part No.05W6950
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id19A
Drain Source On State Resistance0.009ohm
On Resistance Rds(on)0.0074ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd6W
Gate Source Threshold Voltage Max3V
Transistor Case StyleNSOIC
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The SI4840BDY-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, POL and IBC applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6W
Transistor Case Style
NSOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19A
On Resistance Rds(on)
0.0074ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation
6W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability