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SI5935CDC-T1-GE3.
Dual MOSFET, Dual P Channel, 20 V, 4 A
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3.
Newark Part No.26AC3339
Technical Datasheet
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id4A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel10mohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Dual P Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
10mohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
ChipFET
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate