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SI7469ADP-T1-RE3
MOSFET, P-CH, 80V, 46A, POWERSO ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7469ADP-T1-RE3
Newark Part No.15AJ3223
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 42 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.510 |
| 10+ | $1.880 |
| 25+ | $1.740 |
| 50+ | $1.590 |
| 100+ | $1.450 |
| 250+ | $1.350 |
| 500+ | $1.250 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.51
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7469ADP-T1-RE3
Newark Part No.15AJ3223
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id46A
Drain Source On State Resistance0.0161ohm
On Resistance Rds(on)0.0161ohm
Transistor Case StylePowerSO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation Pd73.5W
Power Dissipation73.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0161ohm
Transistor Case Style
PowerSO
Rds(on) Test Voltage
10V
Power Dissipation Pd
73.5W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (07-Nov-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
46A
On Resistance Rds(on)
0.0161ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
Power Dissipation
73.5W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability