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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Quantity | Price |
---|---|
1000+ | $0.984 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$2,952.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-E3
Newark Part No.06J8174
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id4.8A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.095ohm
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Transistor Case StyleSOIC
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI7898DP-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
85mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.8A
On Resistance Rds(on)
0.095ohm
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
4V
Power Dissipation
5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate