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SI8483DB-T2-E1.
Power MOSFET, P Channel, 12 V, 16 A, 0.022 ohm, MICRO FOOT, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 16 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $0.224 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$672.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8483DB-T2-E1.
Newark Part No.23AC9607
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id16A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd13W
Transistor Case StyleMICRO FOOT
Gate Source Threshold Voltage Max400mV
Power Dissipation13W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
13W
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.022ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
MICRO FOOT
Power Dissipation
13W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate