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SIA413DJ-T1-GE3
Power MOSFET, P Channel, 12 V, 12 A, 0.029 ohm, SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 38 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.417 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,251.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA413DJ-T1-GE3
Newark Part No.16P3611
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id12A
On Resistance Rds(on)0.024ohm
Drain Source On State Resistance0.029ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage8V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1V
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
8V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.029ohm
Power Dissipation Pd
3.5W
Transistor Case Style
SC-70
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate