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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA456DJ-T1-GE3
Newark Part No.61AC1918
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.6A
Drain Source On State Resistance1.38ohm
On Resistance Rds(on)1.08ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd19W
Gate Source Threshold Voltage Max1.4V
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.38ohm
Transistor Case Style
SC-70
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
6Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
1.08ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
19W
Power Dissipation
19W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability