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SIA923AEDJ-T1-GE3
Dual MOSFET, P Channel, 20 V, 4.5 A
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.291 |
Price for:Each (Supplied on Cut Tape)
Minimum: 6000
Multiple: 3000
$1,746.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA923AEDJ-T1-GE3
Newark Part No.38X4914
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id4.5A
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.044ohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.044ohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate