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| Quantity | Price |
|---|---|
| 1+ | $2.020 |
| 10+ | $1.790 |
| 25+ | $1.500 |
| 50+ | $1.460 |
| 100+ | $1.430 |
| 250+ | $1.400 |
| 500+ | $1.360 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.02
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD11N80AE-GE3
Newark Part No.81AH9255
Product RangeE
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id8A
Drain Source On State Resistance0.391ohm
On Resistance Rds(on)0.391ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd78W
Power Dissipation78W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.391ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
78W
No. of Pins
3Pins
Product Range
E
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.391ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability