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SIR662DP-T1-GE3
Power MOSFET, N Channel, 60 V, 60 A, 0.0027 ohm, PowerPAK SO, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.330 |
| 25+ | $1.510 |
| 50+ | $1.280 |
| 100+ | $1.040 |
| 250+ | $0.936 |
| 500+ | $0.841 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR662DP-T1-GE3
Newark Part No.83T3534
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0027ohm
On Resistance Rds(on)0.0022ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd104W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SIR662DP-T1-GE3 is a 60V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification, primary side switch, amusement system, DC/DC converter and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg tested
- 100% UIS tested
- Low Qg for high efficiency
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0027ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
104W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0022ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
Power Dissipation
104W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability