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SISH110DN-T1-GE3
MOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISH110DN-T1-GE3
Newark Part No.99AC9581
Product RangeTrenchFET Gen II
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.20
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH110DN-T1-GE3
Newark Part No.99AC9581
Product RangeTrenchFET Gen II
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id13.5A
On Resistance Rds(on)0.0044ohm
Drain Source On State Resistance0.0053ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd1.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen II
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0044ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen II
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
13.5A
Drain Source On State Resistance
0.0053ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability