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SISH521EDN-T1-GE3
MOSFET, P-CH, 20V/104A, POWERPAK 12128SH ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISH521EDN-T1-GE3
Newark Part No.51AM4579
Product RangeTrenchFET Gen V Series
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.250 |
| 10+ | $1.130 |
| 25+ | $1.040 |
| 50+ | $0.930 |
| 100+ | $0.842 |
| 250+ | $0.741 |
| 500+ | $0.651 |
| 1000+ | $0.542 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.25
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH521EDN-T1-GE3
Newark Part No.51AM4579
Product RangeTrenchFET Gen V Series
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id104A
Drain Source On State Resistance0.003ohm
Transistor Case StylePowerPAK 1212-8SH
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
104A
Transistor Case Style
PowerPAK 1212-8SH
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability