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SISS22DN-T1-GE3
MOSFET, N-CH, 60V, 90.6A, 65.7W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS22DN-T1-GE3
Newark Part No.99AC0542
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.870 |
| 10+ | $1.990 |
| 25+ | $1.820 |
| 50+ | $1.660 |
| 100+ | $1.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.87
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS22DN-T1-GE3
Newark Part No.99AC0542
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id90.6A
On Resistance Rds(on)0.00325ohm
Drain Source On State Resistance0.004ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd65.7W
Gate Source Threshold Voltage Max3.6V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.00325ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.6V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
90.6A
Drain Source On State Resistance
0.004ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
65.7W
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability