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Quantity | Price |
---|---|
1+ | $1.100 |
10+ | $1.040 |
25+ | $0.941 |
50+ | $0.843 |
100+ | $0.745 |
250+ | $0.682 |
500+ | $0.619 |
1000+ | $0.577 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQS411ENW-T1_GE3
Newark Part No.21AH4482
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
On Resistance Rds(on)0.021ohm
Drain Source On State Resistance0.0273ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd53.6W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation53.6W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.021ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
53.6W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
TrenchFET
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (07-Nov-2024)
Channel Type
P Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.0273ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
53.6W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability