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SUM60N10-17-E3.
Power MOSFET, N Channel, 100 V, 60 A, 0.0165 ohm, TO-263 (D2PAK), Surface Mount
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1,600 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.700 |
| 2000+ | $2.570 |
| 4000+ | $2.410 |
| 8000+ | $2.250 |
| 12000+ | $2.170 |
| 20000+ | $2.140 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$2,160.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUM60N10-17-E3.
Newark Part No.26AC4110
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
On Resistance Rds(on)0.013ohm
Drain Source On State Resistance0.0165ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max2V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SUM60N10-17-E3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for isolated DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 175°C Operating temperature range
- Low thermal resistance package
- PWM optimized
- Fast switching
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.013ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (1)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate