Print Page
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $115.300 |
| 5+ | $111.150 |
| 10+ | $107.000 |
| 25+ | $101.830 |
| 60+ | $96.920 |
| 120+ | $96.630 |
Price for:Each
Minimum: 1
Multiple: 1
$115.30
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoC2M0045170P
Newark Part No.61AC7502
Product RangeC2M
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id72A
On Resistance Rds(on)0.045ohm
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-247 Plus
No. of Pins4Pins
Power Dissipation Pd520W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation520W
Operating Temperature Max150°C
Product RangeC2M
MSL-
SVHCTo Be Advised
Product Overview
C2M0045170P is a C2M™ silicon carbide, N-channel enhancement mode power MOSFET. applications include solar inverters, switch mode power supplies, high voltage DC/DC converters, motor drive, pulsed power applications.
- 2nd generation SiC MOSFET technology, optimized package with separate driver source pin
- 8mm of creepage distance between drain and source, resistant to latch-up
- High blocking voltage with low on-resistance, high speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency, reduced cooling requirements
- Increased power density, increased system switching frequency
- Drain-source breakdown voltage is 1700V min (VGS = 0V, ID = 100μA, TC = 25°C)
- 3V typical gate threshold voltage (VDS = VGS, ID = 18mA, TC = 25°C)
- 40 ohm typical drain-source on-state resistance at VGS = 20V, ID = 50A, TC = 25°C
- Operating junction temperature range from -40 to 50°C
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
On Resistance Rds(on)
0.045ohm
Drain Source On State Resistance
0.045ohm
No. of Pins
4Pins
Rds(on) Test Voltage
20V
Power Dissipation
520W
Product Range
C2M
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
72A
Drain Source Voltage Vds
1.7kV
Transistor Case Style
TO-247 Plus
Power Dissipation Pd
520W
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
150°C
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability