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C2M0080120D
Silicon Carbide MOSFET, Single, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $31.690 |
| 5+ | $31.150 |
| 10+ | $30.610 |
| 25+ | $25.740 |
| 60+ | $23.540 |
| 120+ | $23.080 |
| 270+ | $22.680 |
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Multiple: 1
$31.69
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoC2M0080120D
Newark Part No.12X8365
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id31.6A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Power Dissipation Pd208W
Gate Source Threshold Voltage Max3.2V
Power Dissipation208W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.08ohm
No. of Pins
3Pins
Power Dissipation Pd
208W
Power Dissipation
208W
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
31.6A
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
3.2V
Operating Temperature Max
150°C
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate