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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      BSZ110N06NS3GATMA1

                      Power MOSFET, N Channel, 60 V, 20 A, 0.009 ohm, PG-TSDSON, Surface Mount

                      Date/Lot Code

                      INFINEON BSZ110N06NS3GATMA1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoBSZ110N06NS3GATMA1
                      Newark Part No.47W3364
                      Also Known AsBSZ110N06NS3 G, SP000453676
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      15,897 In Stock

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                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$0.451
                      10+$0.448
                      100+$0.413
                      500+$0.352
                      1000+$0.310
                      2500+$0.310
                      10000+$0.309
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $0.45
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoBSZ110N06NS3GATMA1
                      Newark Part No.47W3364
                      Also Known AsBSZ110N06NS3 G, SP000453676
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Transistor PolarityN Channel
                      Drain Source Voltage Vds60V
                      Continuous Drain Current Id20A
                      On Resistance Rds(on)0.009ohm
                      Drain Source On State Resistance0.009ohm
                      Transistor Case StylePG-TSDSON
                      Transistor MountingSurface Mount
                      Rds(on) Test Voltage10V
                      Power Dissipation Pd50W
                      Gate Source Threshold Voltage Max3V
                      Power Dissipation50W
                      No. of Pins8Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSLMSL 3 - 168 hours
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.

                      • Highest system efficiency
                      • Less paralleling required
                      • Increased power density
                      • Very low voltage overshoot

                      Applications

                      Power Management, Alternative Energy, Motor Drive & Control, Industrial

                      Technical Specifications

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      60V

                      On Resistance Rds(on)

                      0.009ohm

                      Transistor Case Style

                      PG-TSDSON

                      Rds(on) Test Voltage

                      10V

                      Gate Source Threshold Voltage Max

                      3V

                      No. of Pins

                      8Pins

                      Product Range

                      -

                      MSL

                      MSL 3 - 168 hours

                      Transistor Polarity

                      N Channel

                      Continuous Drain Current Id

                      20A

                      Drain Source On State Resistance

                      0.009ohm

                      Transistor Mounting

                      Surface Mount

                      Power Dissipation Pd

                      50W

                      Power Dissipation

                      50W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Technical Data Sheet EN

                      Alternatives for BSZ110N06NS3GATMA1

                      2 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

                      Customer Service
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                      Technical 01.800.463.9275
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