Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ110N06NS3GATMA1
Newark Part No.47W3364
Also Known AsBSZ110N06NS3 G, SP000453676
Technical Datasheet
15,897 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $0.451 |
10+ | $0.448 |
100+ | $0.413 |
500+ | $0.352 |
1000+ | $0.310 |
2500+ | $0.310 |
10000+ | $0.309 |
Price for:Each
Minimum: 1
Multiple: 1
$0.45
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ110N06NS3GATMA1
Newark Part No.47W3364
Also Known AsBSZ110N06NS3 G, SP000453676
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id20A
On Resistance Rds(on)0.009ohm
Drain Source On State Resistance0.009ohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd50W
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.009ohm
Transistor Case Style
PG-TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 3 - 168 hours
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
50W
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BSZ110N06NS3GATMA1
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability