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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IPB64N25S320ATMA1

                      Power MOSFET, N Channel, 250 V, 64 A, 0.0175 ohm, TO-263 (D2PAK), Surface Mount

                      INFINEON IPB64N25S320ATMA1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoIPB64N25S320ATMA1
                      Newark Part No.13AC9030
                      Product RangeOptiMOS T
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      560 In Stock

                      Need more?

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                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$4.130
                      10+$3.810
                      25+$3.810
                      50+$3.810
                      100+$3.810
                      250+$3.810
                      500+$3.810
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 1
                      Multiple: 1
                      $4.13
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoIPB64N25S320ATMA1
                      Newark Part No.13AC9030
                      Product RangeOptiMOS T
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds250V
                      Continuous Drain Current Id64A
                      Drain Source On State Resistance0.0175ohm
                      Transistor Case StyleTO-263 (D2PAK)
                      Transistor MountingSurface Mount
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max3V
                      Power Dissipation300W
                      No. of Pins3Pins
                      Operating Temperature Max175°C
                      Product RangeOptiMOS T
                      QualificationAEC-Q101
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      IPB64N25S320ATMA1 is a OptiMOS®-T power-transistor. Potential application includes hybrid inverter, DC/DC, piezo injection.

                      • N-channel - enhancement mode, AEC qualified, robust packages with superior quality and reliability
                      • 100% Avalanche tested, optimized total gate charge enables smaller driver output stages
                      • Drain-source breakdown voltage is 250V min (VGS=0V, ID= 1mA, Tj = 25°C)
                      • Drain-source on-state resistance is 20mohm max (VGS=10V, ID=64A, Tj = 25°C)
                      • Continuous drain current is 64A max (TC=25°C, VGS = 10V), power dissipation is 300W
                      • Gate threshold voltage range from 2.0 to 4.0V (VDS=V GS, ID=270µA, Tj = 25°C)
                      • Low switching and conduction power losses for high thermal efficiency
                      • Rise time is 20ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
                      • Fall time is 12ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
                      • PG-TO263-3-2 package, operating temperature range from -55 to +175°C

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      64A

                      Transistor Case Style

                      TO-263 (D2PAK)

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      300W

                      Operating Temperature Max

                      175°C

                      Qualification

                      AEC-Q101

                      SVHC

                      No SVHC (21-Jan-2025)

                      Drain Source Voltage Vds

                      250V

                      Drain Source On State Resistance

                      0.0175ohm

                      Transistor Mounting

                      Surface Mount

                      Gate Source Threshold Voltage Max

                      3V

                      No. of Pins

                      3Pins

                      Product Range

                      OptiMOS T

                      MSL

                      MSL 1 - Unlimited

                      Technical Docs (2)

                      Application Note EN

                      Technical Data Sheet EN

                      Alternatives for IPB64N25S320ATMA1

                      2 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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