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IPP200N15N3GXKSA1
Power MOSFET, N Channel, 150 V, 50 A, 0.02 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP200N15N3GXKSA1
Newark Part No.60R2760
Also Known AsIPP200N15N3 G, SP000680884
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.330 |
| 10+ | $1.490 |
| 100+ | $1.360 |
| 500+ | $1.280 |
| 1000+ | $1.220 |
| 2500+ | $1.150 |
| 5000+ | $1.140 |
Price for:Each
Minimum: 1
Multiple: 1
$2.33
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP200N15N3GXKSA1
Newark Part No.60R2760
Also Known AsIPP200N15N3 G, SP000680884
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id50A
On Resistance Rds(on)0.016ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max3V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.016ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate