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IRF5210PBF
Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $3.070 |
| 10+ | $2.780 |
| 100+ | $1.440 |
| 500+ | $1.180 |
| 1000+ | $1.150 |
| 3000+ | $1.110 |
| 5000+ | $1.100 |
Price for:Each
Minimum: 1
Multiple: 1
$3.07
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF5210PBF
Newark Part No.63J7311
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id40A
On Resistance Rds(on)0.06ohm
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd200W
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
- Advanced Process Technology
- New Ultra Low On-Resistance
- Fast Switching
- Dynamic dv/dt Rating
- Fully Avalanche Rated
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.06ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
200W
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability