Print Page
IRFH7545TRPBF
MOSFET, N-CH, 60V, 85A, 150DEG C, 83W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Newark Part No.12AC9742
Product RangeStrongIRFET, HEXFET
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.140 |
| 10+ | $0.814 |
| 25+ | $0.801 |
| 50+ | $0.788 |
| 100+ | $0.774 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.14
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Newark Part No.12AC9742
Product RangeStrongIRFET, HEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id85A
On Resistance Rds(on)0.0043ohm
Drain Source On State Resistance5200µohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation83W
Power Dissipation Pd83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET, HEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0043ohm
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation
83W
No. of Pins
8Pins
Product Range
StrongIRFET, HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
85A
Drain Source On State Resistance
5200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
Power Dissipation Pd
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate