Print Page
IRFP260NPBF
Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFP260NPBF
Newark Part No.63J6864
Also Known AsSP001552016
Technical Datasheet
5,869 In Stock
Need more?
1661 Delivery in 1-3 Business Days(US stock)
4208 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $5.170 |
| 10+ | $4.500 |
| 100+ | $2.420 |
| 800+ | $1.990 |
Price for:Each
Minimum: 1
Multiple: 1
$5.17
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP260NPBF
Newark Part No.63J6864
Also Known AsSP001552016
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id50A
Drain Source On State Resistance0.04ohm
On Resistance Rds(on)0.04ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd300W
Gate Source Threshold Voltage Max4V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of ±20V
- On resistance Rds(on) of 40mohm at Vgs 10V
- Power dissipation Pd of 300W at 25°C
- Continuous drain current Id of 50A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.04ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
300W
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate