Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFP9140NPBF
Newark Part No.63J6897
Also Known AsSP001556802
Technical Datasheet
99 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
Quantity | Price |
---|---|
1+ | $1.200 |
10+ | $1.200 |
100+ | $1.100 |
500+ | $1.020 |
1600+ | $1.020 |
3200+ | $1.020 |
5600+ | $1.010 |
Price for:Each
Minimum: 1
Multiple: 1
$1.20
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP9140NPBF
Newark Part No.63J6897
Also Known AsSP001556802
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id23A
On Resistance Rds(on)0.117ohm
Drain Source On State Resistance0.117ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd120W
Gate Source Threshold Voltage Max4V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rated
- 175°C Operating temperature
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.117ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
23A
Drain Source On State Resistance
0.117ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
120W
Power Dissipation
120W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability