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AFT09MS015NT1
RF FET Transistor, 40 VDC, 125 W, 136 MHz, 941 MHz, PLD-1.5W
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 500+ | $4.140 |
Price for:Each
Minimum: 1000
Multiple: 1000
$4,140.00
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Product Information
ManufacturerNXP
Manufacturer Part NoAFT09MS015NT1
Newark Part No.44X7175
Technical Datasheet
Drain Source Voltage Vds40VDC
Continuous Drain Current Id-
Power Dissipation125W
Operating Frequency Min136MHz
Power Dissipation Pd125W
Operating Frequency Max941MHz
Transistor Case StylePLD-1.5W
No. of Pins2Pins
RF Transistor CasePLD-1.5W
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
- RF power LDMOS transistor
- Characterized for operation from 136 to 941MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection
- Integrated stability enhancements
- Exceptional thermal performance
- High ruggedness N-channel enhancement mode lateral MOSFET
Technical Specifications
Drain Source Voltage Vds
40VDC
Power Dissipation
125W
Power Dissipation Pd
125W
Transistor Case Style
PLD-1.5W
RF Transistor Case
PLD-1.5W
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
-
Operating Frequency Min
136MHz
Operating Frequency Max
941MHz
No. of Pins
2Pins
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate