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Quantity | Price |
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1+ | $37.820 |
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Multiple: 1
$37.82
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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP5150GNR1
Newark Part No.85AC2003
Technical Datasheet
Drain Source Voltage Vds139V
Continuous Drain Current Id-
Power Dissipation952W
Operating Frequency Min1.8MHz
Power Dissipation Pd952W
Operating Frequency Max600MHz
Transistor Case StyleTO-270WBG
No. of Pins4Pins
RF Transistor CaseTO-270WB
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Product Overview
- RF power LDMOS transistor
- Wide operating frequency range from 1.8 to 600MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection circuitry
- Integrated stability enhancements
- Low thermal resistance
- High ruggedness N-channel enhancement mode lateral MOSFET
Technical Specifications
Drain Source Voltage Vds
139V
Power Dissipation
952W
Power Dissipation Pd
952W
Transistor Case Style
TO-270WBG
RF Transistor Case
TO-270WB
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate