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MJD3055T4G
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 60 V, 2 MHz, 1.75 W, 10 A, 10 RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.472 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,180.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055T4G
Newark Part No.31Y2625
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation Pd1.75W
Power Dissipation1.75W
DC Collector Current10A
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
DC Current Gain hFE10hFE
No. of Pins4Pins
Transition Frequency2MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation Pd
1.75W
DC Collector Current
10A
Transistor Mounting
Surface Mount
No. of Pins
4Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
10A
Power Dissipation
1.75W
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE
10hFE
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability