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2N7002ET1G
Power MOSFET, N Channel, 60 V, 310 mA, 0.86 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002ET1G
Newark Part No.09R9861
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
Drain Source On State Resistance0.86ohm
On Resistance Rds(on)0.86ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd420mW
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-23
Power Dissipation420mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits.
- 1.2A Pulsed drain current
- ±20V Gate-source voltage
- Halogen-free
Applications
Industrial, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.86ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
420mW
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
310mA
On Resistance Rds(on)
0.86ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation
420mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
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Product Compliance Certificate
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