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BC63916-D27Z
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 830 mW, TO-92, Through Hole
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.522 |
| 10+ | $0.371 |
| 25+ | $0.342 |
| 50+ | $0.312 |
| 100+ | $0.283 |
| 250+ | $0.254 |
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Minimum: 1
Multiple: 1
$0.52
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC63916-D27Z
Newark Part No.31Y0502
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Continuous Collector Current1A
Power Dissipation Pd830mW
Power Dissipation830mW
DC Collector Current1A
Transistor Case StyleTO-92
DC Current Gain hFE25hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Alternatives for BC63916-D27Z
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Product Overview
The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications.
- -55 to 150°C Operating junction temperature range
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
830mW
DC Collector Current
1A
DC Current Gain hFE
25hFE
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Continuous Collector Current
1A
Power Dissipation
830mW
Transistor Case Style
TO-92
Transistor Mounting
Through Hole
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate