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BS170-D27Z
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole
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| Quantity | Price |
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| 1+ | $0.448 |
| 10+ | $0.251 |
| 25+ | $0.213 |
| 50+ | $0.175 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBS170-D27Z
Newark Part No.31Y0565
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd830mW
Gate Source Threshold Voltage Max2.1V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.2ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
830mW
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate