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FDMC510P
Power MOSFET, P Channel, 20 V, 18 A, 0.0064 ohm, MLP, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.690 |
| 10+ | $2.000 |
| 25+ | $1.800 |
| 50+ | $1.600 |
| 100+ | $1.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$13.45
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC510P
Newark Part No.55T6319
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18A
On Resistance Rds(on)0.0064ohm
Drain Source On State Resistance0.0064ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd41W
Gate Source Threshold Voltage Max500mV
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDMC510P is a P-channel MOSFET produced using advanced PowerTrench® process. It is suitable for battery management and load switch applications.
- High-performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
- 2kV typical HBM ESD protection level
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0064ohm
Transistor Case Style
MLP
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
500mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.0064ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
41W
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability