Print Page
FDV304P
Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
23,069 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.041 |
| 50+ | $0.041 |
| 100+ | $0.041 |
| 250+ | $0.041 |
| 500+ | $0.041 |
| 1000+ | $0.041 |
| 2500+ | $0.041 |
| 5000+ | $0.041 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.04
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV304P
Newark Part No.58K1480
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id460mA
Drain Source On State Resistance1.22ohm
On Resistance Rds(on)1.22ohm
Transistor MountingSurface Mount
Power Dissipation Pd350mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max860mV
Transistor Case StyleSOT-23
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV303N is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V. FDV303N is designed for battery power applications such as notebook, cellular phones and computers.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Drain to source voltage (Vds) of -25V
- Gate to source voltage of -8V
- Continuous drain current (Id) of -460mA
- Power dissipation (pd) of 350mW
- Low on state resistance of 1.22ohm at Vgs -2.7V
- Operating temperature range from -55°C to 150°C
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1.22ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
460mA
On Resistance Rds(on)
1.22ohm
Power Dissipation Pd
350mW
Gate Source Threshold Voltage Max
860mV
Power Dissipation
350mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDV304P
1 Product Found
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability