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FQB47P06TM-AM002
Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $4.700 |
| 10+ | $3.830 |
| 25+ | $3.810 |
| 50+ | $3.480 |
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$4.70
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB47P06TM-AM002
Newark Part No.61M6403
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id47A
Drain Source On State Resistance0.026ohm
On Resistance Rds(on)0.026ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd160W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins2Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 84nC typical low gate charge
- 320pF typical low Crss
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
160W
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
47A
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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