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FQD17P06TM
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFQD17P06TM
Newark Part No.15R3444
Product RangeQFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.400 |
| 10+ | $1.020 |
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| 50+ | $0.837 |
| 100+ | $0.750 |
| 250+ | $0.674 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD17P06TM
Newark Part No.15R3444
Product RangeQFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeQFET Series
MSL-
SVHCLead
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
QFET Series
SVHC
Lead
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
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