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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
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                      FQP27P06

                      Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole

                      ONSEMI FQP27P06
                      ONSEMI FQP27P06
                      ONSEMI FQP27P06
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerONSEMI
                      Manufacturer Part NoFQP27P06
                      Newark Part No.58K1524
                      Product RangeQFET Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      83,372 In Stock

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                      QuantityPrice
                      1+$1.390
                      10+$1.390
                      100+$1.180
                      500+$1.180
                      1000+$1.090
                      3000+$1.020
                      5000+$1.020
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $1.39
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                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerONSEMI
                      Manufacturer Part NoFQP27P06
                      Newark Part No.58K1524
                      Product RangeQFET Series
                      Technical Datasheet

                      Data Sheet

                      Channel TypeP Channel
                      Transistor PolarityP Channel
                      Drain Source Voltage Vds60V
                      Continuous Drain Current Id27A
                      On Resistance Rds(on)0.07ohm
                      Drain Source On State Resistance0.07ohm
                      Transistor Case StyleTO-220
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Power Dissipation Pd120W
                      Gate Source Threshold Voltage Max4V
                      Power Dissipation120W
                      No. of Pins3Pins
                      Operating Temperature Max175°C
                      Product RangeQFET Series
                      Qualification-
                      MSL-
                      SVHCLead

                      Product Overview

                      The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supply, audio amplifier, DC motor control and variable switching power applications.

                      • Low reverse transfer capacitance of typically 120pF
                      • Low gate charge is typically 33nC
                      • Drain to source voltage (Vds) of -60V
                      • Gate to source voltage of ±25V
                      • Continuous drain current (Id) of -27A
                      • Power dissipation (Pd) of 120W
                      • Low on state resistance of 55mohm at Vgs -10V
                      • Operating temperature range -55°C to 175°C

                      Technical Specifications

                      Channel Type

                      P Channel

                      Drain Source Voltage Vds

                      60V

                      On Resistance Rds(on)

                      0.07ohm

                      Transistor Case Style

                      TO-220

                      Rds(on) Test Voltage

                      10V

                      Gate Source Threshold Voltage Max

                      4V

                      No. of Pins

                      3Pins

                      Product Range

                      QFET Series

                      MSL

                      -

                      Transistor Polarity

                      P Channel

                      Continuous Drain Current Id

                      27A

                      Drain Source On State Resistance

                      0.07ohm

                      Transistor Mounting

                      Through Hole

                      Power Dissipation Pd

                      120W

                      Power Dissipation

                      120W

                      Operating Temperature Max

                      175°C

                      Qualification

                      -

                      SVHC

                      Lead

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Alternatives for FQP27P06

                      1 Product Found

                      Associated Products

                      6 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Y-Ex

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:Lead
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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